关于圆簿板大挠度问题的正交条件解法

本文重新考察了钱伟长教授求解圆薄板大挠度问题的系统近似法,发现此法实质上可视为奇异摄动理论中的变形参数法.以无量纲中心挠度为小参数,将挠度、中面薄膜力和载荷参数作渐近展开,我们对所得的递推方程给出了正交条件(可解性条件),据此可确定圆薄板的刚度特性.本文指出,利用圆薄板小挠度解和正交条件,可以不经求解方程而导得载荷参数与中心挠度关系的三阶近似以及中心点、边缘处的薄膜力的首项近似.文中对若干特例(均布载荷、复合载荷、各种边界条件)进行了具体计算,所得的结果与钱伟长、叶开沅、黄黔等人在文[1～4]中给出的结果完全相符.     

非线性球形薄膜的膨胀失稳

本文应用分支理论研究了非线性球形薄膜在轴对称大变形膨胀过程中的失稳问题.证明了所论非线性边值问题的奇点只能是单重极限点,并讨论了载荷和材料两个参数对球形薄膜平衡状态及其稳定性的影响.     

动荷载作用下高速铁路风积土地基动力特性试验研究

根据辽西地区的地震资料和波速测试资料,通过动三轴试验,进行了地震冲击荷载和列车振动荷载两种动荷载作用下辽西风积土地基的动力特性试验研究。研究结果表明,风积土的动强度、动变形和动模量等指标与荷载类型、持续时间、振动频率和动应力幅值等条件有关。在地震荷载作用下,动荷载频率和动应力幅值越大、震动持续时间越长,其产生的动应变越大;在高速列车振动荷载作用下,土的动强度和动抗剪强度随振动次数的增加而降低;固结比相同时,动弹性模量Ed和动剪切模量Gd随固结压力的增大而增大;随动应变εd的增大而减小,且初始时刻减小速度明显,之后逐渐变缓。     

结构系统可靠性优化设计的神经网络方法

针对具有非正态随机参数的可靠性(优化)设计,提出了随机摄动-Edgeworth级数方法,采用该方法将可靠性概率约束转化为等价的确定型约束,可以迅速准确地获得优化设计信息。针对具有多失效模式的结构系统可靠性优化设计,提出了随机模拟一神经网络方法(MCS—NN),将随机模拟方法与神经网络技术有机结合,为结构系统可靠性优化设计提供了一种新方法。     

Correlation between Conformational Parameters and Rheological Properties of Molten Syndiotactic Polypropylenes

Summary: New rheological results with molten polypropylenes of different degrees of syndiotacticity are presented. The temperature dependence of their dynamic viscoelastic functions is correlated with the characteristic ratio. Relaxation time and Newtonian viscosity values are plotted as a function of molecular weight. The very high values of both rheological parameters found for the most syndiotactic polypropylenes are explained considering the reptation model, which links conformational parameters with the viscoelastic response in the molten state.

Disengagement or reptation time as a function of molecular weight.     

On Distributed $H^1$ Shape Gradient Flows in Optimal Shape Design of Stokes Flows: Convergence Analysis and Numerical Applications

We consider optimal shape design in Stokes flow using $H^1$ shape gradient flows based on the distributed Eulerian derivatives. MINI element is used for discretizations of Stokes equation and Galerkin finite element is used for discretizations of distributed and boundary $H^1$ shape gradient flows. Convergence analysis with a priori error estimates is provided under general and different regularity assumptions. We investigate the performances of shape gradient descent algorithms for energy dissipation minimization and obstacle flow. Numerical comparisons in 2D and 3D show that the distributed $H^1$ shape gradient flow is more accurate than the popular boundary type. The corresponding distributed shape gradient algorithm is more effective.     

LiCl~–阴离子的光谱性质和跃迁性质

采用多参考组态相互作用方法结合全电子基组计算了LiCl~-阴离子5个电子态(X~2Σ~+,A~2Π,B~2Σ~+,3~2Σ~+,2~2Π)的电子结构.为了得到精确的光谱常数,计算中考虑了Davidson修正、芯-价电子关联效应和自旋-轨道稱合效应.拟合得到各电子态的光谱常数、分子常数、自发辐射速率和自发辐射寿命.基态的光谱常数与实验值和其他理论值符合较好,同时报道了LiCl~-阴离子激发态的光谱常数以及其到基态的跃迁性质.计算结果表明A~2Π?X~2Σ~+跃迁具有高对角分布的弗兰克-康登因子f₀₀,第一激发态A~2Π有较短的自发辐射寿命.构造A~2Π(v’)? X~2Σ~+(v")准循环跃迁进行激光冷却LiCl~-阴离子需要一束主激光和两束抽运激光.以上结果预测了激光冷却LiCl~-阴离子是可行的.     

Differential nonlinear photocarrier radiometry for characterizing ultra-low energy boron implantation in silicon

The measuring of the depth profile and electrical activity of implantation impurity in the top nanometer range of silicon encounters various difficulties and limitations, though it is known to be critical in fabrication of silicon complementary metal-oxide-semiconductor (CMOS) devices. In the present work, SRIM program and photocarrier radiometry (PCR) are employed to monitor the boron implantation in industrial-grade silicon in an ultra-low implantation energy range from 0.5 keV to 5 keV. The differential PCR technique, which is improved by greatly shortening the measurement time through the simplification of reference sample, is used to investigate the effects of implantation energy on the frequency behavior of the PCR signal for ultra-shallow junction. The transport parameters and thickness of shallow junction, extracted via multi-parameter fitting the dependence of differential PCR signal on modulation frequency to the corresponding theoretical model, well explain the energy dependence of PCR signal and further quantitatively characterize the recovery degree of structure damage induced by ion implantation and the electrical activation degree of impurities. The monitoring of nm-level thickness and electronic properties exhibits high sensitivity and apparent monotonicity over the industrially relevant implantation energy range. The depth profiles of implantation boron in silicon with the typical electrical damage threshold (Y_ED) of 5.3×10¹⁵ cm^-3 are evaluated by the SRIM program, and the determined thickness values are consistent well with those extracted by the differential PCR. It is demonstrated that the SRIM and the PCR are both effective tools to characterize ultra-low energy ion implantation in silicon.